Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques-Reference-Cited by-同舟云学术

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Published:2011-03 Issue:2 Volume:10 Page:344-351
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Lanza Mario¹,Porti Marc¹,Nafría Montserrat¹,Aymerich Xavier¹,Benstetter Günther²,Lodermeier Edgar²,Ranzinger Heiko²,Jaschke Gert³,Teichert Steffen⁴,Wilde Lutz⁴,Michalowski Pawel Piotr⁴

Affiliation:

1. Department of Electronic Engineering , Universitat Autònoma de Barcelona, Cerdanyola del Vallès, Bellaterra, Spain

2. Electronic Engineering Department , University of Applied Sciences Deggendorf, Deggendorf, Germany

3. Qimonda Dresden GmbH & Co OHG, Dresden, Germany

4. Fraunhofer Center Nanoelectronic Technology, Dresden, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/5725264/05409571.pdf?arnumber=5409571

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