Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates-Reference-Cited by-同舟云学术

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Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:ESSDERC 2007 - 37th European Solid State Device Research Conference
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Author:

Pham A. T.,Jungemann C.,Meinerzhagen B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4430869/4430870/04430960.pdf?arnumber=4430960

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Strained $k \cdot p$ Deformation Potentials on Hole Inversion-Layer Mobility;IEEE Transactions on Electron Devices;2013-04

2. Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations;IEEE Transactions on Electron Devices;2011-06

3. Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach;IEEE Transactions on Electron Devices;2009-09

4. Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering;Journal of Computational Electronics;2009-08-29

5. Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study;Solid-State Electronics;2009-07

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