Germanium-On-Nothing (GeON): an innovative technology for ultrathin Ge film integration-Reference-Cited by-同舟云学术

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Germanium-On-Nothing (GeON): an innovative technology for ultrathin Ge film integration

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:ESSDERC 2007 - 37th European Solid State Device Research Conference
language:
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Author:

Batail E.,Monfray S.,Rideau D.,Szczap M.,Loubet N.,Skotnicki T.,Tabone C.,Hartmann JM.,Borel S.,Rabille G.,Damlencourt JF.,Vincent B.,Previtali B.,Clavelier L.,Bescond M.,Ghibaudo G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4430869/4430870/04430975.pdf?arnumber=4430975

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of End of the Roadmap nMOSFET with Alternative Channel Material;Nanoscale CMOS;2013-03-05

2. Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs;IEEE Electron Device Letters;2011-01

3. (Invited) Si, SiGe, Ge, and III-V Semiconductor Nanomembranes and Nanowires Enabled by SiGe Epitaxy;ECS Transactions;2010-10-01

4. Germanium on Nothing for Nanowire Devices;ECS Transactions;2010-10-01

5. The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?;Materials Science in Semiconductor Processing;2008-10

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