Fabrication and Characteristics of High-Speed Oxide-Confined VCSELs Using InGaAsP–InGaP Strain-Compensated MQWs-Reference-Cited by-同舟云学术

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Fabrication and Characteristics of High-Speed Oxide-Confined VCSELs Using InGaAsP–InGaP Strain-Compensated MQWs

Published:2004-12 Issue:12 Volume:22 Page:2828-2833
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:en
Short-container-title:J. Lightwave Technol.

Author:

Chang Y.-H.,Kuo H.C.,Lai F.,Chang Y.-A.,Lu C.Y.,Laih L.H.,Wang S.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/50/29925/01366484.pdf?arnumber=1366484

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAsP VECSEL for watt-level output at a wavelength around 765 nm;Optics Letters;2022-04-19

2. Quantum-Well Lasers and Their Applications;Reference Module in Materials Science and Materials Engineering;2016

3. VCSEL-Based Data Links;Optical Fiber Telecommunications;2013

4. Impact of photon lifetime on thermal rollover in 850-nm high-speed VCSELs;SPIE Proceedings;2012-02-09

5. Impact of Device Parameters on Thermal Performance of High-Speed Oxide-Confined 850-nm VCSELs;IEEE Journal of Quantum Electronics;2012-01

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