2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si-Reference-Cited by-同舟云学术

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2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si

Published:1990 Issue:9 Volume:38 Page:1199-1203
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Subbarao S.N.,Bechtle D.W.,Menna R.J.,Connolly J.C.,Camisa R.L.,Narayan S.Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/2130/00058643.pdf?arnumber=58643

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Development of a new Responsivity Prediction Model for In0.53Ga0.47As Interdigitated Lateral p-i-n Photodiode;Journal of Optical Communications;2009-01

2. SNR prediction model of an In0.53Ga0.47As interdigitated lateral p-i-n photodiode;2008 IEEE International Conference on Semiconductor Electronics;2008-11

3. Effect of illumination positioning on the characteristics of an In0.53Ga0.47as interdigitated lateral PIN photodiode;2008 IEEE International Conference on Semiconductor Electronics;2008-11

4. Novel 3D modeling of In 0.53 Ga 0.47 As lateral PIN photodiode;Microelectronics: Design, Technology, and Packaging III;2007-12-21

5. Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors;Microelectronics Reliability;1999-12

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