A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization-Reference-Cited by-同舟云学术

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A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization

Published:2012-04 Issue:4 Volume:33 Page:558-560
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee I-Che,Tsai Chun-Chien,Kuo Hsu-Hang,Yang Po-Yu,Wang Chao-Lung,Cheng Huang-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6172299/06163340.pdf?arnumber=6163340

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of the Morphology and Structure of Thin Silicon Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2021-01

2. High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization;IEEE Electron Device Letters;2018-03

3. Formation and characterization of high-performance silicon thin-film transistors with and without location-controlled grain boundary;Journal of Micromechanics and Microengineering;2017-09-12

4. High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films;Japanese Journal of Applied Physics;2017-05-08

5. Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride;IEEE Electron Device Letters;2016-09

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