A Novel Four-Mask Low-Temperature Polycrystalline Silicon PMOS Thin-Film Transistor With Advanced Terrace Structure for AMOLED Application-Reference-Cited by-同舟云学术

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A Novel Four-Mask Low-Temperature Polycrystalline Silicon PMOS Thin-Film Transistor With Advanced Terrace Structure for AMOLED Application

Published:2012-10 Issue:10 Volume:33 Page:1417-1419
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Sang-Jin,Noh Sang-Soon,Shin Hee-Sun,Lee Seok-Woo,Park Seong-Kee,Shin Woo-Sup,Jun Myung-Chul

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06291742.pdf?arnumber=6291742

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Performance improvement of poly-Si tunnel thin-film transistor by NH3 plasma treatment;Thin Solid Films;2016-11

3. A novel current-biased voltage-programmed pixel circuit with low temperature polycrystalline silicon thin film transistors for AMOLED;IEICE Electronics Express;2015

4. Threshold Voltage and IR Drop Compensation of an AMOLED Pixel Circuit Without a $V_{\rm DD}$ Line;IEEE Electron Device Letters;2014-01

5. The fabrication and optical detection of a vertical structure organic thin film transistor;Opto-Electronics Review;2014-01-01

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