$\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory-Reference-Cited by-同舟云学术

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$\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory

Published:2012-09 Issue:9 Volume:33 Page:1231-1233
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Sang Hyeon,Kim Moonkyung,Cheong Byung-ki,Lee Jo-Won,Tiwari Sandip

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6276318/06248157.pdf?arnumber=6248157

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films;Acta Materialia;2016-02

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