Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit-Reference-Cited by-同舟云学术

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Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

Published:2012-10 Issue:10 Volume:33 Page:1390-1392
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ren Jingjian,Li Bei,Zheng Jian-Guo,Olmedo Mario,Zhou Huimei,Shi Yi,Liu Jianlin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06266686.pdf?arnumber=6266686

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step;Nanoscale Research Letters;2015-05-19

2. Comparative study of silicon nanowire transistors with triangular-shaped cross sections;Japanese Journal of Applied Physics;2015-01-16

3. 3D Memory Using Double-Gate, Folded, TFT, and Stacked Crystal Silicon;Vertical 3D Memory Technologies;2014-07-25

4. Comprehensive Study of N-Channel and P-Channel Twin Poly-Si FinFET Nonvolatile Memory;IEEE Transactions on Nanotechnology;2014-07

5. Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel;Applied Physics A;2013-02-26

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