Temperature Dependence of the Field Emission Characteristics of AlGaN/GaN Nanoscale Vacuum Diodes-Reference-Cited by-同舟云学术

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Temperature Dependence of the Field Emission Characteristics of AlGaN/GaN Nanoscale Vacuum Diodes

Published:2024-07-15 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 37th International Vacuum Nanoelectronics Conference (IVNC)
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Author:

Hernandez Nathaniel¹,Cahay Marc¹,Hart James¹,O'Mara Jonathan²,Ludwick Jonathan³,Walker Dennis E.²,Back Tyson⁴,Hall Harris²

Affiliation:

1. University of Cincinnati,Spintronics and Vacuum Nanoelectronics Laboratory,Cincinnati,Ohio,USA

2. Air Force Research Laboratory, Sensors Directorate,USA

3. UES a BlueHalo company,Dayton,Ohio,USA

4. Air Force Research Laboratory, Materials and Manufacturing Directorate,Ohio,USA

Funder

Air Force Office of Scientific Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10649892/10652259/10652492.pdf?arnumber=10652492

Reference8 articles.

1. High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors

2. Practical nanoscale field emission devices for integrated circuits

3. Ultralow Voltage GaN Vacuum Nanodiodes in Air

4. An Al 0.25 Ga 0.75 N/GaN Lateral Field Emission Device with a Nano Void Channel

5. Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes

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