Modeling of local reduction in TiSi/sub 2/ and CoSi/sub 2/ growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species-Reference-Cited by-同舟云学术

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Modeling of local reduction in TiSi/sub 2/ and CoSi/sub 2/ growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species

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Container-title:International Electron Devices Meeting. Technical Digest
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Author:

Fornara P.,Poncet A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00553125.pdf?arnumber=553125

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Characterization of Micrometric and Localised Residual Stresses on Amorphous Materials Using Dispersion of Surface Acoustic Waves;Advanced Materials Research;2014-08

3. Characterization of micrometric and superficial residual stresses using high frequency surface acoustic waves generated by interdigital transducers;The Journal of the Acoustical Society of America;2013-12

4. Influence of a superficial field of residual stress on the propagation of surface waves—Applied to the estimation of the depth of the superficial stressed zone;Applied Physics Letters;2012-12-03

5. Investigation and modeling of stress effects on the formation of cobalt salicide;IEEE Electron Device Letters;2005-09

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