Highly reliable liquid-phase deposited SiO/sub 2/ with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFTs-Reference-Cited by-同舟云学术

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Highly reliable liquid-phase deposited SiO/sub 2/ with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFTs

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Container-title:International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
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Author:

Yeh C.F.,Chen D.C.,Lu C.Y.,Liu C.,Lee S.T.,Liu C.H.,Chen T.J.

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Annealing on GaN Metal–Insulator–Semiconductor Capacitors by Using Liquid-Phase-Deposition SiO[sub 2];Electrochemical and Solid-State Letters;2009

2. Process Improvement and Reliability Characteristics of Spin-On Poly-3-hexylthiophene Thin-Film Transistor;Journal of The Electrochemical Society;2005

3. Improved Characteristics of Ultrathin CeO[sub 2] by Using Postnitridation Annealing;Journal of The Electrochemical Society;2004

4. Novel Barrier Dielectric Liner Prepared by Liquid-Phase Deposition and NH3-Plasma Annealing;Japanese Journal of Applied Physics;2000-12-15

5. Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si[sub 1−x]Ge[sub x] layers;Applied Physics Letters;2000

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