MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x/-Reference-Cited by-同舟云学术

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MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x/

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Container-title:International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
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Author:

Ya-Chin King ,Tsu-Jae King ,Chenming Hu

Publisher

IEEE

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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