Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing-Reference-Cited by-同舟云学术

Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Pillarisetty R.¹,Watson T.F.¹,Mueller B.¹,Henry E.¹,George H.C.¹,Bojarski S.¹,Lampert L.¹,Luthi F.¹,Kotlyar R.¹,Zietz O.¹,Neyens S.¹,Borjans F.¹,Caudillo R.¹,Michalak D.¹,Nahm R.¹,Park J.¹,Ramsey M.¹,Roberts J.¹,Schaal S.¹,Zheng G.¹,Krahenmann T.²,Lodari M.²,Zwerver A.M.J.²,Veldhorst M.²,Scappucci G.²,Vandersvpen L.M.K.²,Clarke J.S.²

Affiliation:

1. Intel Corporation, Components Research, Technology Development Group,Hillsboro,OR,USA,97124

2. QuTech and Kavli Institute of Nanoscience, TU Delft,Delft,GA,The Netherlands,2600

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720567.pdf?arnumber=9720567

Reference19 articles.

1. Temperature dependence of the conductivity for the two-dimensional electron gas: Analytical results for low temperatures

2. Electronic properties of two-dimensional systems

3. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

4. Improved MOSFET characterization technique for single channel length, scaled transistors

5. Single-shot read-out of an individual electron spin in a quantum dot

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