Germanium sulfide-based solid electrolytes for non-volatile memory

Author:

Balakrishnan M.,Kozicki M.N.,Gopalan C.,Mitkova M.

Publisher

IEEE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. SiO2-Based Conductive-Bridging Random Access Memory;Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations;2021-10-16

2. Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films;Materials Science Forum;2021-07-20

3. Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM Memory Cells;The Journal of Physical Chemistry C;2015-07-30

4. Conductive-bridging random access memory: challenges and opportunity for 3D architecture;Nanoscale Research Letters;2015-04-18

5. Future Prospect of Nanoelectronic Devices;Lecture Notes in Electrical Engineering;2013

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