Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors-Reference-Cited by-同舟云学术

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Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors

Published:2024-04-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Sünbül Ayse¹,Lehninger David¹,Hoffmann Raik¹,Mähne Hannes²,Bernert Kerstin²,Thiem Steffen²,Kampfe Thomas¹,Siedel Konrad¹,Lederer Maximilian¹,Eng Lukas M.³

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems IPMS, Center Nanoelectronic Technologies CNT,Dresden,Germany,01109

2. X-FAB Dresden GmbH & Co. KG,Dresden,Germany,01099

3. Institute of Applied Physics, Technische Universitat Dresden,Dresden,Germany,01187

Funder

ECSEL Joint Undertaking

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529302.pdf?arnumber=10529302

Reference28 articles.

1. FerroElectronics for Edge Intelligence

2. Edge Intelligence—On the Challenging Road to a Trillion Smart Connected IoT Devices

3. Ferroelectricity in hafnium oxide thin films

4. FeFET: A versatile CMOS compatible device with game-changing potential

5. Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio

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