A Comprehensive Hot Carrier Injection with Voltage Ramp Stress (HCI-VRS) through Different Model Verification for More than Moore Diversity Application
Author:
Affiliation:
1. Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529412.pdf?arnumber=10529412
Reference8 articles.
1. Time-Zero Dielectric Reliabilty Test by a Ramp Method;Berman
2. Reliability screening of high-k dielectrics based on voltage ramp stress
3. Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications
4. Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks
5. Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices
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