Robust Off-State TDDB Reliability of n-LDMOS
Author:
Affiliation:
1. GLOBALFOUNDRIES,Essex Junction,VT,U.S.A
2. GLOBALFOUNDRIES,Hopewell Junction,NY,U.S.A.
3. GLOBALFOUNDRIES,Malta,NY,U.S.A.
4. GLOBALFOUNDRIES,Santa Clara,CA,U.S.A.
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764573.pdf?arnumber=9764573
Reference6 articles.
1. Voltage-Splitting Technique for Reliability Evaluation of Off-State Mode of MOSFETs in Ultrathin Gate Oxides
2. OFF-state mode TDDB reliability for ultrathin gate oxides: New methodology and the impact of oxide thickness scaling;wu;IRPS,2004
3. Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide
4. Layout dependence of gate dielectric TDDB in HKMG FinFET technology
5. Sub-threshold current based acceleration and modeling of OFF-state TDDB in drain extended NMOS and PMOS transistors
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ESD-ability Analysis of High Voltage nLDMOSs with the Drain-side Parasitic Schottky/Embedded STI;2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE);2022-10-28
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