Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications
Author:
Affiliation:
1. University of Modena and Reggio Emilia,Dipartimento di Ingegneria "Enzo Ferrari",Modena,Italy,41125
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764502.pdf?arnumber=9764502
Reference22 articles.
1. Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition
2. Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
3. Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
4. Characterization of Buffer-Related Current Collapse by Buffer Potential Simulation in AlGaN/GaN HEMTs
5. Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs
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