MOVPE Grown 1360-nm GaInNAs Quantum-Well Laser With Multibarrier Structures-Reference-Cited by-同舟云学术

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MOVPE Grown 1360-nm GaInNAs Quantum-Well Laser With Multibarrier Structures

Published:2004-09 Issue:9 Volume:16 Page:1994-1996
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:en
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Kim K.-S.,Lim S.-J.,Kim K.-H.,Yoo J.-R.,Kim T.,Park Y.-J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/29327/01325210.pdf?arnumber=1325210

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures;Nanotechnology;2008-10-02

2. Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates;Semiconductors;2008-07

3. Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers;Journal of Applied Physics;2006-08-15

4. Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS;Journal of Crystal Growth;2006-01

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