Author:
Sasaki R. A.,Rangel Ricardo C.,Ramos Daniel A.,Yojo Leonardo S.,Martino Joao A.
Cited by
2 articles.
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1. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28
2. Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22