Current collapse in AlGaN/GaN HEMTs with a GaN cap layer-Reference-Cited by-同舟云学术

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Current collapse in AlGaN/GaN HEMTs with a GaN cap layer

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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Author:

Yoshida S.,Sakaida Y.,Asubar J. T.,Tokuda H.,Kuzuhara M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7153313/7158481/07158543.pdf?arnumber=7158543

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs;Micromachines;2024-04-26

2. Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures;Journal of Crystal Growth;2023-12

3. Strategy for Reliable Growth of Thin Gan Caps on Algan Hemt Structures;2023

4. Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted;Applied Physics Express;2022-11-01

5. Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection;IEEE Sensors Journal;2022-04-01

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