Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers
Author:
Funder
ELENOS s.r.l
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/8412378/08194911.pdf?arnumber=8194911
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1. On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past;IEEE Transactions on Microwave Theory and Techniques;2024-09
2. Simplified Emulation of Active Load Modulation for a Millimeter-Wave GaN MMIC Doherty Power Amplifier Design;IEEE Transactions on Microwave Theory and Techniques;2024-01
3. Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-12-13
4. Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate;International Journal of RF and Microwave Computer-Aided Engineering;2021-08-10
5. Resonant-Linear Hybrid Structure for Power Amplifier at Radio Frequency Band;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-08
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