Implications of Ageing Through Power Cycling on the Short-Circuit Robustness of 1.2-kV SiC mosfets
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/8824237/08634945.pdf?arnumber=8634945
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events;IEEE Transactions on Device and Materials Reliability;2023-12
2. A Robust Design Method of Desaturation Protection Circuit for Silicon Carbide Power MOSFETs;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
3. Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-10
4. Mobile Low Voltage Fault Indicator;2023 Russian Workshop on Power Engineering and Automation of Metallurgy Industry: Research & Practice (PEAMI);2023-09-29
5. Dv/dt Sensing-Based Short-Circuit Protection for Medium-Voltage SiC mosfets;IEEE Transactions on Power Electronics;2023-09
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