Investigation of Si IGBT Operation at 200$\,{}^\circ$C for Traction Applications-Reference-Cited by-同舟云学术

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Investigation of Si IGBT Operation at 200$\,{}^\circ$C for Traction Applications

Published:2013-05 Issue:5 Volume:28 Page:2604-2615
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Xu Zhuxian,Li Ming,Wang Fei,Liang Zhenxian

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/6361328/06297479.pdf?arnumber=6297479

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. A Refinement Multilevel Turn-off Method for Dynamic Latch-up and Tail Current Suppression in DC Breaker Ultra-High Current Switch Applications;IEEE Transactions on Industrial Electronics;2024-03

4. Active Thermal Control of IGBT Modules Based on Finite-Time Boundedness;Micromachines;2023-11-08

5. An Online Condition Monitoring Method for IGBT Gate Oxide Degradation Based on the Gate Current in Miller Plateau;IEEE Transactions on Industrial Electronics;2023-09

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