Author:
Sanudin Rahmat,Sulong Muhammad Suhaimi,Morsin Marlia,Wahab Mohd Helmy Abd
Cited by
2 articles.
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1. Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations;Semiconductor Science and Technology;2024-06-18
2. Mathematical Validation of 100nm n-MOSFET using Silvaco TCAD;2023 7th International Conference On Computing, Communication, Control And Automation (ICCUBEA);2023-08-18