I–V characteristics of a ZnO thick-film varistor fabricated by cold-pressing method-Reference-Cited by-同舟云学术

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I–V characteristics of a ZnO thick-film varistor fabricated by cold-pressing method

Published:2009-07 Issue: Volume: Page:
ISSN:
Container-title:2009 1st Asia Symposium on Quality Electronic Design
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Author:

Orvatinia Mohammad,Gandomkar Saeed

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5190881/5206227/05206265.pdf?arnumber=5206265

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature;IEEE Transactions on Electron Devices;2018-10

2. Effect of Impurities and Temperature on Electrical Properties of ZnO-Based Varistors;Energy Procedia;2012

3. Optimization Of Impurities “Bi2O3, Nb2O5, MnO2, Co3O4, Cr2O3, NiO, Ce2O3, and La2O3” to Improve the ZnO Based Varistor Nonlinearity;Energy Procedia;2012

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