Ferroelectrics: From Memory to Computing
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9036752/9045099/09045150.pdf?arnumber=9045150
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Doped Hafnium Oxides on Memory Window and Low-Frequency Noise in Ferroelectric FETs;IEEE Transactions on Electron Devices;2024-07
2. Time-Domain-Based Non-volatile In-Memory Computing Architecture Using FeFETs for Binary Neural Network;2024 25th International Symposium on Quality Electronic Design (ISQED);2024-04-03
3. Universal Compact Model of Flicker Noise in Ferroelectric Logic and Memory Transistors;IEEE Transactions on Electron Devices;2024-01
4. Breaking the energy-efficiency barriers for smart sensing applications with “Sensing with Computing” architectures;Science China Information Sciences;2023-09-06
5. FeCrypto: Instruction Set Architecture for Cryptographic Algorithms Based on FeFET-Based In-Memory Computing;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-09
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