Differential multiple-valued logic using resonant tunneling diodes
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Publisher
IEEE Comput. Soc. Press
Link
http://xplorestaging.ieee.org/ielx2/288/3484/00122619.pdf?arnumber=122619
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Computational design of tunnel diodes with negative differential resistance and ultrahigh peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi2N4/HfSi2N4/NbSi2N4 lateral heterojunction diode;Physical Review Applied;2024-07-01
2. Theoretical Prediction of Semiconductor-Free Negative Differential Resistance Tunnel Diodes with High Peak-to-Valley Current Ratios Based on Two-Dimensional Cold Metals;ACS Applied Nano Materials;2023-02-22
3. Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function;IEICE Transactions on Electronics;2010
4. Noise-Tolerant Quantum MOS Circuits Using Resonant Tunneling Devices;IEEE Transactions On Nanotechnology;2004-03
5. Digital circuit applications of resonant tunneling devices;Proceedings of the IEEE;1998-04
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