Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

Published:2024-08 Issue:8 Volume:45 Page:1405-1408
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Xinyu¹^ORCID,Yuan Dengwen¹^ORCID,Lai Lingling¹^ORCID,Zeng Fanpeng¹,Zhang Bin¹,Wang Tianlu¹,Ge Lei¹,Cui Yingxin¹,Xu Mingsheng¹,Cheong Kuan Yew²^ORCID,Zhong Yu¹^ORCID,Hu Xiaobo¹,Xu Xiangang¹,Han Jisheng¹

Affiliation:

1. Institute of Novel Semiconductor Materials and the State Key Laboratory of Crystal Materials, Shandong University, Jinan, China

2. Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, Penang, Malaysia

Funder

Major Science and Technology Innovation Project of Shandong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10612269/10552315.pdf?arnumber=10552315

Reference16 articles.

1. Characteristic and Robustness of Trench Floating Limiting Rings for 4H-SiC Junction Barrier Schottky Rectifiers

2. A review of the etched terminal structure of a 4H-SiC PiN diode

3. High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis

4. Material science and device physics in SiC technology for high-voltage power devices

5. Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP