Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors

Published:2024-07 Issue:7 Volume:45 Page:1205-1208
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shang Kexin¹^ORCID,Li Xufan¹,Zhang Yanqin¹,Yang Zhenzhong²,Li Mengmeng¹^ORCID,Wang Lingfei¹^ORCID,Li Ling¹^ORCID

Affiliation:

1. State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Department of Electronics, State Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Strategic Priority Research Program of Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10535887.pdf?arnumber=10535887

Reference21 articles.

1. Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

2. A quad CMOS single-supply op amp with rail-to-rail output swing

3. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

4. ZnO flexible high voltage thin film transistors for power management in wearable electronics

5. Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP