Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO<sub>2</sub> Gate Stacks With Vertical Channel Configurations-Reference-Cited by-同舟云学术

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Energy Efficient Electrolytic-Gated Synapse Transistors Using InGaZnO/HfO₂ Gate Stacks With Vertical Channel Configurations

Published:2024-09 Issue:9 Volume:45 Page:1673-1676
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Dong-Hee¹,Kwon Young-Ha²^ORCID,Seong Nak-Jin²^ORCID,Choi Kyu-Jeong²,Yang Jong-Heon³^ORCID,Hwang Chi-Sun³^ORCID,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, Gyeonggi-do, South Korea

2. NCD Company Ltd., Daejeon, South Korea

3. Electronics and Telecommunications Research Institute, Daejeon, South Korea

Funder

Technology Innovation Program

Ministry of Trade, Industry and Energy (MOTIE), South Korea

National Research Foundation of Korea

Korean Government through Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587285.pdf?arnumber=10587285

Reference13 articles.

1. Vertical organic synapse expandable to 3D crossbar array

2. A Flexible Artificial Synapse for Neuromorphic System

3. Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction

4. Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

5. Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration

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