High Temperature Tolerant Ge-on-Si Single Photon Avalanche Diode at the Communication Wavelength-Reference-Cited by-同舟云学术

High Temperature Tolerant Ge-on-Si Single Photon Avalanche Diode at the Communication Wavelength

Published:2024-08 Issue:8 Volume:45 Page:1413-1416
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Chi-En¹^ORCID,Huang Shih-Min²,Wang Tzu-Jui²,Hsu Ming-Chieh²^ORCID,Huang Kuan-Chieh²,Wu Jau-Yang³^ORCID,Wu Chao-Hsin⁴^ORCID

Affiliation:

1. Graduate School of Advanced Technology and the Center for Quantum Science and Engineering, National Taiwan University, Taipei, Taiwan

2. Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan

3. Department of Electrical Engineering, Yuan Ze University, Taoyuan, Taiwan

4. Graduate Institute of Electronics Engineering, the Center for Quantum Science and Engineering, the Graduate Institute of Photonics and Optoelectronics, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

National Science and Technology Council, Taiwan

National Taiwan University

Taiwan Semiconductor Manufacturing Company

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10612269/10559994.pdf?arnumber=10559994

Reference20 articles.

1. Single-photon detectors for optical quantum information applications

2. Kilometer-range depth imaging at 1550 nm wavelength using an InGaAs/InP single-photon avalanche diode detector

3. Single-photon three-dimensional imaging at up to 10 kilometers range

4. Subcentimeter depth resolution using a single-photon counting time-of-flight laser ranging system at 1550 nm wavelength

5. Photon Counting OTDR: Advantages and Limitations