A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor-Reference-Cited by-同舟云学术

A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor

Published:2024-07 Issue:7 Volume:45 Page:1169-1172
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhao Shujing¹^ORCID,Yu Han Chuan¹^ORCID,Tian Fengbin²^ORCID,Yuan Yubin¹,Chai Junshuai²^ORCID,Xu Hao²^ORCID,Fan Shiquan¹^ORCID,Li Xin¹^ORCID,Liu Weihua¹^ORCID,Li Can³^ORCID,Man Tang Wing³,Lai P. T.³^ORCID,Huang Xiaodong⁴^ORCID,Zhang Guohe¹^ORCID,Geng Li¹^ORCID,Wang Xiaolei²^ORCID

Affiliation:

1. Department of Microelectronics, School of Electronic and Information Engineering, XiÃan Jiaotong University, Xi’an, China

2. National Key Laboratory of Integrated Circuit Manufacturing Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

3. Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China

4. Key Laboratory of MEMS of the Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, China

Funder

National Natural Science Foundation of China

Research Grants Council of the Hong Kong Special Administrative Region, China

Strengthening Basic Disciplines Program

Key Research and Development Plan of Shaanxi Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10521566.pdf?arnumber=10521566

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