Deep Ridge InGaAlAs/InP MQW Transistor Lasers-Reference-Cited by-同舟云学术

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Deep Ridge InGaAlAs/InP MQW Transistor Lasers

Published:2024-07 Issue:7 Volume:45 Page:1225-1228
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Chenyang¹,Xiong Xinkai²^ORCID,Qiao Lijun¹^ORCID,Zhang Mingjiang¹^ORCID,Zhao Lingjuan²^ORCID,Liang Song²^ORCID

Affiliation:

1. Key Laboratory of Advanced Transducers, the Key Laboratory of Advanced Transducers and Intelligent Control System, Ministry of Education, Shanxi Province, and the College of Physics, Taiyuan University of Technology, Taiyuan, China

2. Key Laboratory of Optoelectronic Materials and Devices, Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Key Research and Development Project of Shanxi Province

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

Strategic Priority Research Program of Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10531804.pdf?arnumber=10531804

Reference20 articles.

1. The transistor laser

2. Baldur: A Power-Efficient and Scalable Network Using All-Optical Switches

3. InP-based monolithic integration of 1.55-μm MQW laser diode and HBT driver circuit

4. Transistor Laser-Integrated Photonics for Optical Logic: Unlocking Unique Electro-Optical Integration Potential to Open Up New Possibilities for Logic Processors

5. Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

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