Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors-Reference-Cited by-同舟云学术

Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

Published:2024-03 Issue:3 Volume:45 Page:396-399
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhong Yilun¹^ORCID,Zou Jiwei¹,Guo Taoming¹^ORCID,Han Lei²^ORCID,Zou Ye³^ORCID,Tang Wei²^ORCID,Liu Yongpan¹^ORCID,Yang Huazhong¹^ORCID,Guo Yunlong³,Jiang Chen¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Tsinghua University, Beijing, China

2. Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, China

3. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Lingang Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10449685/10420480.pdf?arnumber=10420480

Reference32 articles.

1. Sub-thermionic, ultra-high-gain organic transistors and circuits

2. A printed proximity-sensing surface based on organic pyroelectric sensors and organic thin-film transistor electronics

3. Advances in flexible organic field-effect transistors and their applications for flexible electronics

4. A strain-absorbing design for tissue–machine interfaces using a tunable adhesive gel

5. Current Status and Opportunities of Organic Thin-Film Transistor Technologies

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