Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories-Reference-Cited by-同舟云学术

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Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 Electron Devices Technology and Manufacturing Conference (EDTM)
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Author:

Woo Changbeom,Kim Shinkeun,Park Jaeyeol,Lee Dongiun,Kang Myounggon,Jeon Jongwook,Shin Hyungcheol

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8718786/8731017/08731083.pdf?arnumber=8731083

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory;IEEE Transactions on Electron Devices;2024-08

2. Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Advanced FTIR optical modeling for hydrogen content measurements in 3D NAND cell nitride and amorphous carbon hard mask;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

4. Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash;IEEE Access;2024

5. Advanced Method for Predicting Lifetime of NAND Memory Data Retention Using Long term (1 Year) Characterization;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

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