Design of a Ka-band MMIC Low Noise Amplifier for 5G applications
Author:
Affiliation:
1. Le Quy Don Technical University,Ha Noi-City,Viet Nam
Funder
TED
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9701446/9701447/09701480.pdf?arnumber=9701480
Reference8 articles.
1. An Ultra-Low-Power 24 GHz Low-Noise Amplifier Using 0.13 $\mu{\rm m}$ CMOS Technology
2. RF Microelectronics;razavi;Hamilton Printing Company,2011
3. A K-band low noise amplifier with on-chip baluns in 90nm CMOS
4. A 24-GHz 3.8-dB NF Low-Noise Amplifier with Built-In Linearizer;kuo;Asia-Pacific Microw Conf,2010
5. Q-Band InAlGaN/GaN LNA using current reuse topology
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1. HEMT As a Potential Contender For 5th Generation Communication Technology;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08
2. A 24-30 GHz MMIC Low Noise Amplifier in GaN-on-SiC 150-nm Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
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