Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM-Reference-Cited by-同舟云学术

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Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

Published:2012-07 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Radiation Effects Data Workshop
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Author:

Grürmann Kai¹,Herrmann Martin¹,Gliem Fritz¹,Schmidt Hagen²,Leibeling Gilbert³,Kettunen Heikki⁴,Ferlet-Cavrois Véronique⁵

Affiliation:

1. Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany

2. Astrium GmbH, Friedrichshafen, Germany

3. Fraunhofer-Inst. fur Angewandte Opt. und Feinmechanik IOF, Jena, Germany

4. Dept. of Phys., Univ. of Jyvaskyla, Jyvaskyla, Finland

5. ESA-ESTEC, Eur. Space Agency, Noordwijk, Netherlands

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6353295/6353706/06353718.pdf?arnumber=6353718

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-energy proton-induced single event effect in NAND flash memories;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-07

2. Space and terrestrial radiation effects in flash memories;Semiconductor Science and Technology;2017-02-21

3. A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays;IEEE Transactions on Nuclear Science;2014-12

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