Author:
Qiao Ming,Wang Wen-Lian,Li Zhao-Ji,Zhang Bo
Cited by
2 articles.
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1. The differences between
N
‐ and
N
+ buried layers in improving the breakdown voltage of RESURF LDMOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-12-10
2. A review of HVI technology;Microelectronics Reliability;2014-12