SiGe HBT Device in Mixed Dry Wet Etching-Reference-Cited by-同舟云学术

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SiGe HBT Device in Mixed Dry Wet Etching

Published:2006-01 Issue: Volume: Page:
ISSN:
Container-title:2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems
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Author:

Liu Daoguang,Xu Jun,Xu Shiliu,Hao Yue,Qian Peixin,Liu Zhihong,Hu Gangyi,Zhang Zhengfan,Zhang Jing,Liu Rongkan,Liu Luncai,Li Rongqiang,He Kaiquan,Liu Yukui,Chen Guangbing,Koenig Ulf,Kibbel Horst,Gruhle Andreas,Seiler Ulrich,Li Kaicheng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4134878/4084516/04134923.pdf?arnumber=4134923

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys;IEEE Access;2021

2. Modelling of the active defects influence on the electrical characteristics of an SiGe-HBT;Chinese Journal of Physics;2017-08

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