Structural and strain relaxation study of epitaxially grown nano-thick Nd<inf>2</inf>O<inf>3</inf>/Si(111) heterostructure-Reference-Cited by-同舟云学术

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Structural and strain relaxation study of epitaxially grown nano-thick Nd2O3/Si(111) heterostructure

Published:2009 Issue: Volume: Page:
ISSN:
Container-title:2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
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Author:

Jinxing Wang ,Laha Apurba,Fissel Andreas,Schwendt Dominik,Dargis Rytis,Watahiki Tatsuro,Shayduk Roman,Braun Wolfgang,Liu Tianmo,Osten H. Jorg

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4982489/5068512/05068613.pdf?arnumber=5068613

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19

2. Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001);RSC Advances;2021

3. Effect of deposition temperature on structure and properties of Nd2O3 thin films prepared by magnetron sputtering;Vacuum;2019-11

4. Structural and Thermal Properties of Single Crystalline Epitaxial Gd2O3and Er2O3Grown on Si(111);ECS Journal of Solid State Science and Technology;2012

5. Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon;Microelectronics Reliability;2010-05

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