A Charge Pump Based 1.5A NMOS LDO with 1.0~6.5V Input Range and 110mV Dropout Voltage
Author:
Affiliation:
1. School of Electronics and Information Technology Sun Yat-sen University,Guangzhou,China
Funder
Natural Science Foundation of Guangdong Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962812/9962965/09963126.pdf?arnumber=9963126
Reference6 articles.
1. A Multi-Loop Slew-Rate-Enhanced NMOS LDO Handling 1-A-Load-Current Step With Fast Transient for 5G Applications
2. An Impedance Adapting Compensation Scheme for High Current NMOS LDO Design
3. Power efficient charge pump in deep submicron standard cmos technology
4. An External Capacitor-Less Low-Dropout Voltage Regulator Using a Transconductance Amplifier
5. A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Fully Integrated High-Efficiency All-NMOS Charge Pump for Wide Input Range Ultra-Low Dropout Regulator;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27
2. Design of Charge Pump Circuit for Stepper Motor Drive Chip;Journal of Physics: Conference Series;2023-10-01
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