High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging-Reference-Cited by-同舟云学术

High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging

Published:2024-02 Issue:1 Volume:60 Page:1-11
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Wang Luyang¹^ORCID,Jha Aman Kumar¹^ORCID,Baxamusa Salmaan H.²^ORCID,Kotovsky Jack²,Deri Robert J.²,Swertfeger Rebecca B.²,Thiagarajan Prabhu³,Crowley Mark T.³,Thaler Gerald³,Song Jiyon³,Pipe Kevin P.⁴

Affiliation:

1. Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI, USA

2. Lawrence Livermore National Laboratory, Livermore, CA, USA

3. Leonardo Electronics US Inc., Tucson, AZ, USA

4. Department of Mechanical Engineering and the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA

Funder

U.S. Department of Energy, the Lawrence Livermore National Laboratory within the Laboratory Directed Research and Development (LDRD) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/3/10325395/10288188-aam.pdf

Reference36 articles.

1. Degradation of (AlGa)As DH lasers due to facet oxidation

2. Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes

3. Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodes

4. Laser diode reliability: crystal defects and degradation modes

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