Thermal Characterization and Simulation of GaN-on-SiC HEMT Transistors in Transient and Steady-State Regimes-Reference-Cited by-同舟云学术

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Thermal Characterization and Simulation of GaN-on-SiC HEMT Transistors in Transient and Steady-State Regimes

Published:2024-04-07 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
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Author:

Karrame K.¹,Nallatamby J.C.¹,Chang C.²,Colas M.³,Sommet R.¹

Affiliation:

1. Laboratoire XLIM, 16 rue Jules Vallés,Brive La Gaillarde,France,19100

2. United Monolithic Semiconductors, 10 avenue du Québec,Villebon-sur-Yvette,France,91140

3. Centre Européen de la Céramique, 12 Rue Atlantis,Limoges,France,87068

Funder

Labex

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491281/10491408/10491531.pdf?arnumber=10491531

Reference14 articles.

1. Transient gate resistance thermometry demonstrated on GaAs and GaN FET

2. Thermal Simulation and Characterization of GaN HEMT using Gate Resistance Thermometry and Thermoreflectance imaging

3. Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance

4. CCD-based thermoreflectance microscopy: principles and applications

5. Improving the Transient Thermal Characterization of GaN HEMTs

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