Apparent heat capacity model of the SiC MOSFET’s Aluminium top surface for short-circuits simulations
Author:
Affiliation:
1. Univ. Bordeaux,CNRS, Bordeaux INP, IMS,Talence,France,F-33400
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9758836/9758837/09758917.pdf?arnumber=9758917
Reference14 articles.
1. Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters
2. Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†
3. Temperature Dependent Short Circuit Capability of Silicon Carbide (SiC) Power MOSFETs;wang,0
4. An efficient tangent scheme for solving phase-change problems
5. Recent advances, trends and new perspectives via enthalpy-based finite element formulations for applications to solidification problems
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1. Transient thermal 2D FEM analysis of SiC MOSFET in short-circuit operation including high-temperature material laws and phase transition of aluminum source electrode;Microelectronics Reliability;2024-08
2. Comparison of crack resistance of two SiC MOSFETs gate geometries under short-circuit by FE simulations;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
3. Electro-thermo-mechanical modelling of a SiC MOSFET transistor under non-destructive short-circuit;Microelectronics Reliability;2023-11
4. Multi-scale electro-thermo-mechanical simulation of a SiC MOSFET transitor during short-circuit;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17
5. Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17
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