Substrate Network Modeling for Lateral p-GaN Gate HEMTs in a 200V GAN-IC Platform
Author:
Affiliation:
1. IMEC and Ghent University,Center for Microsystems Technology (CMST)
2. Interuniversity Microelectronics Center (IMEC)
3. Ghent University,Liquid Crystals and Photonics (LCP)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10303272/10303640/10303677.pdf?arnumber=10303677
Reference8 articles.
1. High Resistivity AlxGa1−xN Layers Grown by MOCVD
2. Resistivity control in unintentionally doped GaN films grown by MOCVD
3. Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate
4. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
5. Leaky Dielectric” Model for the Suppression of Dynamic RON in Carbon-Doped AlGaN/GaN HEMTs;uren;IEEE Transactions on Electron Devices,2017
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