High total ionizing dose and temperature effects on micro- and nano-electronic devices-Reference-Cited by-同舟云学术

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High total ionizing dose and temperature effects on micro- and nano-electronic devices

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA)
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Author:

Gaillardin M.,Martinez M.,Girard S.,Goiffon V.,Paillet P.,Leray J.L,Magnan P.,Ouerdane Y.,Boukenter A.,Marcandella C.,Duhamel O.,Raine M.,Richard N.,Andrieu F.,Barraud S.,Faynot O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6717173/6727869/06728068.pdf?arnumber=6728068

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Characterization Method for TID Versus Temperature Effects on Microelectronic Circuits;IEEE Transactions on Nuclear Science;2024-08

2. TID effects on I–V characteristics of bulk CMOS STD and ELT-based devices in 600 nm;Microelectronics Journal;2020-03

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