A Design of 6-18 GHz Power Amplifier for Efficiency Enhancement at Saturation
Author:
Affiliation:
1. Nanjing Electronic Devices Institute,Nanjing,China,210016
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10022051/10022057/10022507.pdf?arnumber=10022507
Reference8 articles.
1. 6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier
2. 8‐12 GHz single‐input GaN load modulated balanced amplifier monolithic microwave integrated circuit
3. A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling
4. 6–18 GHz 13W reactive matched GaN power amplifier MMIC;tao;Proc Eur Microw Integr Circuit Conf,2017
5. RF-Input Load Modulated Balanced Amplifier With Octave Bandwidth
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