A GaN Terahertz Device with High Performance
Author:
Affiliation:
1. Yangzhou Haike Electronic Technology Co., LTD,Yangzhou,Jiangsu,China,225001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10022051/10022057/10022453.pdf?arnumber=10022453
Reference7 articles.
1. Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency
2. Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling
3. Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating
4. High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz
5. Use of AlGaN in the notch region of GaN Gunn diodes
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